![]() These advances will enable EV power conversion systems to deliver faster charging, faster acceleration, longer range and lower cost EVs which will accelerate our planet’s transition from fossil-fuel to clean-air vehicles, added the statement. The official statement said that GaN and SiC are ‘wide bandgap’ power semiconductors that deliver higher efficiency at faster switching speeds, with smaller system sizes and lower costs than legacy silicon chips. It is learnt that the R&D lab will be further supported by Navitas’ own unique EV System Design Centre, which is located in Shanghai. Engineers and system design teams from both companies will work in the lab with advanced power system design tools. Mr Shuibao Guo, Vice GM, VREMT and Mr Charles Zha, VP & GM, Navitas China recently opened this joint lab in Ningbo, China. Navitas’ GaNFast (gallium nitride, GaN) power ICs and GeneSiC (silicon carbide, SiC) power MOSFETs and diodes will be utilized for this purpose. ![]() VREMT, a leading electric powertrain supplier, and Navitas Semiconductor jointly announced the opening of an advanced R&D power semiconductor laboratory to accelerate EV power-system developments. ![]() Navitas’ EV System Design Centre of Shanghai will also provide support.Advanced EV high-voltage applications will be developed in the new lab.
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